broomfield, co 80021 1 eds-101993 rev h the information provided herein is believed to be reliable at press time. sirenza microdevices assumes no responsibility for i naccuracies or omissions. sirenza microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user?s own risk. prices and specifications are subject to chang e without notice. no patent rights or licenses to any of the circuits described herein are implied or granted to any third party. sirenza microdevices does not authorize or warrant any sirenza microdevices product for use in lif e-support devices and/or systems. copyright 2005 sirenza microdevices, inc.. all worldwide rights reserved. 303 s. technology ct. phone: (800) smi-mmic http://www.sirenza.com cga-3318 CGA-3318Z dual catv broadband high linearity sige hbt amplifier product features ? available in lead free, rohs compliant, & green packaging ? excellent cso/ctb/xmod performance at +34 dbmv output power per tone ? dual devices in each soic-8 package simplify push-pull configuration pc board layout ? 5 to 900 mhz operation applications ? catv head end driver and predriver amplifier ? catv line driver amplifier pb rohs compliant & packag e green product description sirenza microdevice?s cga-3318 is a high performance silicon germanium hbt mmic amplifier. designed with sige process technology for excellent linearity at an exceptional price. a darlington configuration is utilized for broadband performance. the heterojunction increases breakdown voltage and minimizes leakage current between junctions. the cga-3318 contains two amplifiers for use in wideband push-pull catv amplifiers requiring excellent second order performance. the second and third order non-linearities are greatly improved in the push pull configuration. 1 2 3 4 8 7 6 5 amplifier configuration symbol parameter freq.(mhz) min. typ. max. units g small signal gain 5 50 500 870 10.0 13.2 12.5 12.5 12.0 db oip2 output second order intercept point tone spacing = 1 mhz, pout per tone = +6 dbm 50 250 500 67.0 69.0 71.5 69.0 dbm oip3 output third order intercept point tone spacing = 1 mhz, pout per tone = +6 dbm 50 500 870 36.0 36.5 38.0 38.0 dbm p1db output power at 1db gain compression 50 500 870 18.6 20.0 21.0 20.6 dbm irl input return loss 500 50-870 10 17.0 db o rl o utp ut r e turn l o ss 500 50-870 10 12.0 db nf noise figure balun insertion loss included 50 500 870 4.2 4.3 5.0 6.0 db cso worst case over band, 79 ch., flat, +34dbmv 70 dbc ctb worst case over band, 79 ch., flat, +34dbmv 68 dbc xmod worst case over band, 79 ch., flat, +34dbmv 63 dbc v d device operating voltage 3.9 4.1 4.3 v i d device operating current 135 150 165 ma r th(j-l ) thermal resistance (junction to lead) 50 c/w electrical specifications
broomfield, co 80021 2 eds-101993 rev h 303 s. technology ct. phone: (800) smi-mmic http://www.sirenza.com cga-3318 dual sige hbt amplifier absolute maximum ratings caution: esd sensitive appropriate precautions in handling, packaging and testing devices must be observed. parameter rating esd rating - human body model (hbm) class 1b moisture sensitivity level msl 1 reliability & qualification information this product qualification report can be downloaded at www.sirenza.com typical rf performance: v s =8v, i d =150ma @ t l =+25c, r bias =51 ohms, push-pull configuration 75 ohm push pull s-parameters are available for download at www.sirenza.com gain vs. frequency 6 8 10 12 14 16 0 100 200 300 400 500 600 700 800 900 1000 frequency (mhz) |s21| (db) +25c -40c +85c input return loss vs. frequency -30 -25 -20 -15 -10 -5 0 0 100 200 300 400 500 600 700 800 900 1000 frequency (mhz) |s11| (db) +25c -40c +85c output return loss vs. frequency -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 0 100 200 300 400 500 600 700 800 900 1000 frequency (mhz) |s22| (db) +25c -40c +85c parameter absolute limit max device current (i d ) 225 ma max device voltage (v d ) 6 v max. rf input power +18 dbm max. junction temp. (t j ) +150c operating temp. range (t l ) -40c to +85c max. storage temp. +150c operation of this device beyond any one of these limits may cause permanent damage. for reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. bias conditions should also satisfy the following expression: i d v d < (t j - t l ) / r th , j-l t l =t lead
broomfield, co 80021 3 eds-101993 rev h 303 s. technology ct. phone: (800) smi-mmic http://www.sirenza.com cga-3318 dual sige hbt amplifier typical rf performance: v s =8v, i d =150ma @ t l =+25c, r bias =51 ohms, push-pull configuration ip3 vs. temperature 20 25 30 35 40 45 50 0 0.2 0.4 0.6 0.8 1 frequency (ghz) ip3 (dbm) -40c 25c 85c ip2 vs. temperature 50 55 60 65 70 75 80 0 0.2 0.4 0.6 0.8 1 frequency (ghz) ip2 (dbm) -40c +25c +85c second harmonic vs. pout and frequency data shown is typical at 25c 20 30 40 50 60 70 80 90 100 03691215 pout (dbm) im2 (dbc) 66mhz 100mhz 250mhz 500mhz third harmonic vs. pout and frequency data shown is typical at 25c 20 30 40 50 60 70 80 90 100 03691215 pout (dbm) im3 (dbc) 66mhz 100mhz 250mhz 500mhz push-pull noise figure 50mhz-900mhz typical 0 1 2 3 4 5 6 0 200 400 600 800 1000 frequency (mhz) nf (db) push-pull ctb/cso/xmod 34 dbmv/ch., 79 ch., flat 40 50 60 70 80 90 100 0 100 200 300 400 500 600 frequency (mhz) dbc ctb cso- cso+ xm o d
broomfield, co 80021 4 eds-101993 rev h 303 s. technology ct. phone: (800) smi-mmic http://www.sirenza.com cga-3318 dual sige hbt amplifier cso/ctb/xmod performance: v s =8v, i d =150ma @ t l =+25c, r bias =51 ohms, push-pull config, 79 ch. flat analog, no digital channels. push-pull ctb vs. pout and frequency 40 50 60 70 80 90 100 0 100 200 300 400 500 600 frequency (mhz) dbc 32dbmv 34dbmv 36dbmv 38dbmv 40dbmv 42dbmv push-pull xmod vs. pout and frequency 40 50 60 70 80 90 100 0 100 200 300 400 500 600 frequency (mhz) dbc 32dbmv 34dbmv 36dbmv 38dbmv 40dbmv 42dbmv push-pull cso- vs. pout and frequency 40 50 60 70 80 90 100 0 100 200 300 400 500 600 frequency (mhz) dbc 32dbmv 34dbmv 36dbmv 38dbmv 40dbmv 42dbmv push-pull cso+ vs. pout and frequency 40 50 60 70 80 90 100 0 100 200 300 400 500 600 frequency (mhz) dbc 32dbmv 34dbmv 36dbmv 38dbmv 40dbmv 42dbmv note: cso measurements > 85 dbc can be limited by system noise.
broomfield, co 80021 5 eds-101993 rev h 303 s. technology ct. phone: (800) smi-mmic http://www.sirenza.com cga-3318 dual sige hbt amplifier typical rf performance - single ended - 50 ohm system v s =8v, i d =75ma (one amp biased), t l =+25c, r bias =51 ohms typical rf performance - single ended - 37.5 ohm system v s =8v, i d =75ma (one amp biased), t l =+25c, r bias =51 ohms 50 ohm and 37.5 ohm single ended s-parameter files are available for download at www.sirenza.com gain & isolation vs. frequency 0 2 4 6 8 10 12 14 16 0.00.51.01.52.02.53.03.54.0 frequency (ghz) gain (db) -32 -28 -24 -20 -16 -12 -8 -4 0 isolation (db) isolation gain |s11| & |s22| vs. frequency -40 -35 -30 -25 -20 -15 -10 -5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 frequency (ghz) db |s11| |s22| gain & isolation vs. frequency 0 2 4 6 8 10 12 14 16 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 frequency (ghz) gain (db) -32 -28 -24 -20 -16 -12 -8 -4 0 isolation (db) gain isolation |s11| & |s22| vs. frequency -40 -35 -30 -25 -20 -15 -10 -5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 frequency (ghz) db |s11| |s22|
broomfield, co 80021 6 eds-101993 rev h 303 s. technology ct. phone: (800) smi-mmic http://www.sirenza.com cga-3318 dual sige hbt amplifier pin # function description device pin out 1 rf in device 1 rf input pin. this pin requires the use of an external dc blocking capacitor as shown in the schematic. 2,3 ground connection to ground. use via holes for best performance to reduce lead inductance as close to ground leads as possible. 4 rf in device 2 same as pin 1 5 rf out / vcc device 2 rf output and bias pin. bias should be supplied to this pin through an external series resistor and rf choke inductor. because dc biasing is present on this pin, a dc blocking capacitor should be used in most applications (see application schematic). the supply side of the bias network should be well bypassed. 6,7 ground same as pins 2 and 3 8 rf out / vcc device 1 same as pin 5 epad ground exposed area on the bottom side of the package must be soldered to the ground plane of the board for optimum thermal and rf performance. several vias should be located under the epad as shown in the recommended land pattern on page 5. 50-870 mhz application schematic cga-3318 soic-08 1000 pf 0.01 f 1000pf 68pf v s r bias amp 1 1000 pf 1000 pf 1000 pf 220 nh macom etc1-1-13 macom etc1-1-13 1 f tant. 1 f tant. 0.01 f 1000pf 68pf 220 nh v s r bias amp 2 1 4 8 5 6,7 2,3 50-870 mhz evaluation board layout 1 2 3 4 8 7 6 5 2(v s -v d ) i d r bias = ecb-101611 rev a esop-8 push-pull eval board rf output rf input .01uf 1000pf 68pf 220nh 220nh 68pf 1000pf .01uf 1000pf 1000pf 1000pf 1000pf balun etc1-1-13 balun etc1-1-13 rbias rbias 1uf tant. 1uf tant. part number ordering information part number reel size devices / reel cga-3318 7" 500 CGA-3318Z 7" 500 supply voltage (v s ) 8v 9v 12v 15v r bias 51 ? 62? 100? 150? r bias power rating 1/2w 1/2w 1w 1w recommended bias resistor values for id= 150ma
broomfield, co 80021 7 eds-101993 rev h 303 s. technology ct. phone: (800) smi-mmic http://www.sirenza.com cga-3318 dual sige hbt amplifier typical 5-100 mhz rf performance: v s =8v, i d =150ma @ t l =+25c, push-pull configuration 5-100 mhz application schematic 5-100 mhz evalution board layout cga-3318 soic-08 0.01 f 0.01 f 1000pf 68pf v s r bias amp 1 0.01 f 0.01 f 0.01 f 10 ? macom etc1-1t macom etc1-1t 1 f tant. 1 f tant. 0.01 f 1000pf 68pf 10 ? v s r bias amp 2 1 4 8 5 6,7 2,3 ecb-101611 rev a esop-8 push-pull eval board rf output rf input .01uf 1000pf 68pf 10uh 10uh 68pf 1000pf .01uf 0.01uf 0.01uf 0.01uf 0.01uf balun etc1-1t balun etc1-1t rbias rbias 1uf tant. 1uf tant. return loss vs. frequency -30 -25 -20 -15 -10 -5 0 0 102030405060708090100 frequency (mhz) |s11| and |s22| (db) |s11| |s22| gain vs. frequency 6 8 10 12 14 16 0 102030405060708090100 frequency (mhz) |s21| (db) p1db and ip3 vs. frequency 16 17 18 19 20 21 22 0 102030405060708090100110 frequency (mhz) p1db (dbm) 34 35 36 37 38 39 40 ip3 (dbm) p1db ip3 noise figure vs. frequency 0 1 2 3 4 5 6 7 8 0 102030405060708090100110 frequency (mhz) nf (db)
broomfield, co 80021 8 eds-101993 rev h 303 s. technology ct. phone: (800) smi-mmic http://www.sirenza.com cga-3318 dual sige hbt amplifier lot code cga3318 pcb pad layout dimensions in inches [millimeters] sized for 31 mil thick fr-4 nominal package dimensions & package marking dimensions in inches [millimeters ] refer to package drawing posted at www.sirenza.com for tolerances. lot code cga3318z lead free tin-lead
|
